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mrf6v2010nr1 mrf6v2010nbr1 1 rf device data freescale semiconductor rf power field effect transistors n--channel enhancement--mode lateral mosfets designed primarily for cw large--signal output and driver applications with frequencies up to 450 mhz. devices are unmatched and are suitable for use in industrial, medical and scientific applications. ? typical cw performance at 220 mhz: v dd =50volts,i dq =30ma, p out = 10 watts power gain ? 23.9 db drain efficiency ? 62% ? capable of handling 10:1 vswr, @ 50 vdc, 220 mhz, 10 watts cw output power features ? characterized with series equival ent large--signal impedance parameters ? qualified up to a maximum of 50 v dd operation ? integrated esd protection ? 225 c capable plastic package ? rohs compliant ? to--270--2 in tape and reel. r1 suffix = 500 units per 24 mm, 13 inch reel. ? to--272--2 in tape and reel. r1 suffix = 500 units per 44 mm, 13 inch reel. table 1. maximum ratings rating symbol value unit drain--source voltage v dss --0.5, +110 vdc gate--source voltage v gs --0.5, +10 vdc storage temperature range t stg -- 65 to +150 c case operating temperature t c 150 c operating junction temperature (1,2) t j 225 c table 2. thermal characteristics characteristic symbol value (2,3) unit thermal resistance, junction to case case temperature 81 c, 10 w cw r jc 3.0 c/w 1. continuous use at maximum temperature will affect mttf. 2. mttf calculator available at http://www.freescale.com/rf . select software & tools/devel opment tools/calculators to access mttf calculators by product. 3. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes -- an1955. document number: mrf6v2010n rev. 5, 4/2010 freescale semiconductor technical data 10--450 mhz, 10 w, 50 v lateral n--channel broadband rf power mosfets mrf6v2010nr1 mrf6v2010nbr1 case 1265--09, style 1 t o -- 2 7 0 -- 2 plastic mrf6v2010nr1 case 1337--04, style 1 t o -- 2 7 2 -- 2 plastic mrf6v2010nbr1 ? freescale semiconductor, inc., 2007--2008, 2010. a ll rights reserved.
2 rf device data freescale semiconductor mrf6v2010nr1 mrf6v2010nbr1 table 3. esd protection characteristics test methodology class human body model (per jesd22--a114) 2 (minimum) machine model (per eia/jesd22--a115) a (minimum) charge device model (per jesd22--c101) iv (minimum) table 4. moisture sensitivity level test methodology rating package peak temperature unit per jesd 22--a113, ipc/jedec j--std--020 3 260 c table 5. electrical characteristics (t a =25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics gate--source leakage current (v gs =5vdc,v ds =0vdc) i gss ? ? 10 adc drain--source breakdown voltage (i d =5ma,v gs =0vdc) v (br)dss 110 ? ? vdc zero gate voltage drain leakage current (v ds =50vdc,v gs =0vdc) i dss ? ? 50 adc zero gate voltage drain leakage current (v ds = 100 vdc, v gs =0vdc) i dss ? ? 2.5 ma on characteristics gate threshold voltage (v ds =10vdc,i d =28 adc) v gs(th) 1 1.68 3 vdc gate quiescent voltage (v dd =50vdc,i d = 30 madc, measured in functional test) v gs(q) 1.5 2.68 3.5 vdc drain--source on--voltage (v gs =10vdc,i d =70madc) v ds(on) ? 0.26 ? vdc dynamic characteristics reverse transfer capacitance (v ds =50vdc 30 mv(rms)ac @ 1 mhz, v gs =0vdc) c rss ? 0.13 ? pf output capacitance (v ds =50vdc 30 mv(rms)ac @ 1 mhz, v gs =0vdc) c oss ? 7.3 ? pf input capacitance (v ds =50vdc,v gs =0vdc 30 mv(rms)ac @ 1 mhz) c iss ? 16.3 ? pf functional tests (in freescale test fixture, 50 ohm system) v dd =50vdc,i dq =30ma,p out =10w,f=220mhz,cw power gain g ps 22.5 23.9 25.5 db drain efficiency d 58 62 ? % input return loss irl ? -- 1 4 -- 9 db attention: the mrf6v2010n and mrf6v2010nb are hi gh power devices and special considerations must be followed in board design and mounting. incorrect mounting can lead to internal temperatures which exceed the maximum allowable operating junction temper ature. refer to freescale application note an3263 (for bolt down mounting) or an1907 (for solder reflow mounting) prior to starting system design to ensure proper mounting of these devices.
mrf6v2010nr1 mrf6v2010nbr1 3 rf device data freescale semiconductor figure 1. mrf6v2010nr1(nbr1) test circuit schematic z7 0.062 x 0.270 microstrip z8 0.198 x 0.082 microstrip z9 5.600 x 0.082 microstrip z10 0.442 x 0.082 microstrip z11 0.341 x 0.082 microstrip pcb arlon cuclad 250gx--0300--55--22, 0.030 , r =2.55 z1 0.235 x 0.082 microstrip z2 1.190 x 0.082 microstrip z3 0.619 x 0.082 microstrip z4 0.190 x 0.270 microstrip z5 0.293 x 0.270 microstrip z6 0.120 x 0.270 microstrip z1 rf input c1 z2 z3 z4 dut z7 c18 rf output z10 c5 b1 v bias v supply c3 + c4 c2 + c12 c13 c11 c16 + c7 c6 z5 z11 z6 b2 r1 l1 l3 c8 c14 c15 c9 c10 z8 z9 l2 c17 table 6. mrf6v2010nr1(nbr1) test circui t component designations and values part description part number manufacturer b1, b2 95 ? , 100 mhz long ferrite beads 2743021447 fair--rite c1, c8, c11, c18 1000 pf chip capacitors atc100b102jt50xt atc c2 10 f, 35 v tantalum capacitor t491d106k035at kemet c3 22 f, 35 v tantalum capacitor t491x226k035at kemet c4, c13 39 k pf chip capacitors atc200b393kt50xt atc c5, c14 22 k pf chip capacitors atc200b223kt50xt atc c6, c15 0.1 f chip capacitors cdr33bx104akys kemet c7, c12 2.2 f, 50 v chip capacitors c1825c225j5rac kemet c9 0.6--4.5 pf variable capacitor, gigatrim 27271sl johanson c10 12 pf chip capacitor atc100b120jt500xt atc c16 470 f, 63 v electrolytic capacitor esmg630ell471mk205 united chemi--con c17 27 pf chip capacitor atc100b270jt500xt atc l1 17.5 nh inductor b06t coilcraft l2, l3 82 nh inductors 1812sms--82nj coilcraft r1 120 ? , 1/4 w chip resistor crcw1206120rfkea vishay
4 rf device data freescale semiconductor mrf6v2010nr1 mrf6v2010nbr1 figure 2. mrf6v2010nr1(nbr1) t est circuit component layout mrf6v2010n/nb cut out area rev. 3 c4 c5 c6 b1 c2 c3 c1 r1 l1 c7 c8 c13 c14 c15 l2 c12 c11 c9 c10 l3 c17 c18 b2 c16
mrf6v2010nr1 mrf6v2010nbr1 5 rf device data freescale semiconductor typical characteristics 50 0.1 100 020 10 v ds , drain--source voltage (volts) figure 3. capacitance versus drain--source voltage c, capacitance (pf) 30 c iss 0.1 100 1 t c =25 c 10 10 v ds , drain--source voltage (volts) figure 4. dc safe operating area i d , drain current (amps) 40 0.35 0 drain voltage (volts) 20 120 figure 5. dc drain current versus drain voltage i d , drain current (amps) 60 18 25 i dq =45ma 0.1 23 22 21 p out , output power (watts) cw figure 6. cw power gain versus output power g ps , power gain (db) v dd =50vdc f1 = 220 mhz 10 1 40 100 24 v gs =3v c oss c rss 80 100 2.75 v 2.63 v 2.5 v 2.25 v 20 10 38 ma -- 5 5 -- 2 0 1 p out , output power (watts) pep -- 2 5 -- 3 0 -- 3 5 -- 4 0 10 20 figure 7. third order intermodulation distortion versus output power imd, third order intermodulation distortion (dbc) v dd =50vdc f1 = 220 mhz, f2 = 220.1 mhz two--tone measurements 100 khz tone spacing -- 4 5 -- 5 0 23 37 47 13 17 15 45 43 41 39 p in , input power (dbm) figure 8. cw output power versus input power p out , output power (dbm) 19 21 p3db = 40.87 dbm (12.2 w) actual ideal p1db = 40.43 dbm (11.04 w) v dd =50vdc,i dq =30ma f = 220 mhz 1 200 0.3 0.25 0.2 0.15 0.1 0.05 0 120 19 30 ma 23 ma 15 ma i dq =45ma 38 ma i dq =60ma 15 ma 23 ma 38 ma 45 ma 30 ma measured with 30 mv(rms)ac @ 1 mhz v gs =0vdc
6 rf device data freescale semiconductor mrf6v2010nr1 mrf6v2010nbr1 typical characteristics figure 9. power gain versus output power p out , output power (watts) cw g ps , power gain (db) v dd =20v 25 v 14 10 26 08 2 18 16 46 24 22 i dq =30ma f = 220 mhz 30 v 35 v 40 v 50 v 20 10 12 45 v 14 12 25 20 45 0 25 _ c t c =--30 _ c 85 _ c 15 5 35 30 25 p in , input power (dbm) figure 10. power output versus power input p out , output power (dbm) v dd =50vdc i dq =30ma f = 220 mhz 10 20 40 18 26 0.1 0 72 1 25 23 21 63 54 45 36 27 18 p out , output power (watts) cw figure 11. power gain and drain efficiency versus cw output power g ps , power gain (db) d, drain efficiency (%) d 24 22 20 10 20 25 _ c t c =--30 _ c 85 _ c 85 _ c g ps v dd =50vdc i dq =30ma f = 220 mhz 25 _ c -- 3 0 _ c 19 9 19 27 0 0 80 2 25 23 21 60 50 40 30 20 p out , output power (watts) cw figure 12. power gain and drain efficiency versus cw output power g ps , power gain (db) d, drain efficiency (%) 24 22 20 10 12 g ps @64mhz 10 250 10 8 90 t j , junction temperature ( c) figure 13. mttf versus junction temperature this above graph displays calculated mttf in hours when the device is operated at v dd =50vdc,p out = 10 w cw, and d = 62%. mttf calculator available at http://www.freescale.com/rf. select software & tools/development tools/calculators to access mttf calculators by product. 10 7 10 6 10 5 110 130 150 170 190 mttf (hours) 210 230 26 70 468 d @ 450 mhz g ps @ 450 mhz d @ 220 mhz d @ 64 mhz d @ 130 mhz g ps @ 130 mhz g ps @ 220 mhz v dd =50vdc i dq =30ma
mrf6v2010nr1 mrf6v2010nbr1 7 rf device data freescale semiconductor z o =50 ? z load f = 220 mhz f = 220 mhz z source v dd =50vdc,i dq =30ma,p out =10wcw f mhz z source ? z load ? 220 20 + j25 75 + j44 z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. figure 14. series equivalent source and load impedance z source z load input matching network device under test output matching network
8 rf device data freescale semiconductor mrf6v2010nr1 mrf6v2010nbr1 figure 15. mrf6v2010nr1(nbr1) test ci rcuit component layout ? 130 mhz 130 mhz cut out area rev. 1 c10 c9 c8 c7 c6 b1 c1 l1 c5 r1 c2 c3 c4 c14 c15 c16 b2 c17 l5 c13 c12 c11 l2 l3 c18 l4 c19 table 7. mrf6v2010nr1(nbr1) test circuit c omponent designations and values ? 130 mhz part description part number manufacturer b1, b2 95 ? , 100 mhz long ferrite beads, surface mount 2743021447 fair--rite c1, c5, c18, c19 1000 pf chip capacitors atc100b102jt50xt atc c2, c12 0.6--4.5 pf variable capacitors, gigatrim 27271sl johanson c3 27 pf chip capacitor atc100b270jt500xt atc c4, c13 2.2 f, 50 v chip capacitors c1825c225j5rac kemet c6, c14 0.1 f, 50 v chip capacitors cdr33bx104akym kemet c7, c15 22k pf chip capacitors atc200b223kt50xt atc c8, c16 39k pf chip capacitors atc200b393kt50xt atc c9 22 f, 35 v tantalum capacitor t491x226k035at kemet c10 10 f, 35 v tantalum capacitor t491d106k035at kemet c11 16 pf chip capacitor atc100b160jt500xt atc c17 330 f, 63 v electrolytic capacitor mcrh63v337m13x21--rh multicomp l1 17.5 nh inductor b06t coilcraft l2, l5 82 nh inductors 1812sms--82nj coilcraft l3 35.5 nh inductor b09t coilcraft l4 43 nh inductor b10t coilcraft r1 100 ? , 1/4 w chip resistor crcw1206100rfkea vishay pcb pcb material 0.030? cuclad 250gx--0300--55--22, 0.030 , r =2.55 arlon
mrf6v2010nr1 mrf6v2010nbr1 9 rf device data freescale semiconductor figure 16. mrf6v2010nr1(nbr1) test ci rcuit component layout ? 450 mhz 450 mhz cut out area rev. 1 c10 c9 c8 c7 c6 b1 c1 l1 c5 r1 c4 c16 c17 c18 b2 c19 l4 c11 l2 l3 c12 c15 c20 c2 c3 c13 c14 table 8. mrf6v2010nr1(nbr1) test circuit c omponent designations and values ? 450 mhz part description part number manufacturer b1, b2 95 ? , 100 mhz long ferrite beads, surface mount 2743021447 fair--rite c1, c5, c12, c15 240 pf chip capacitors atc100b241jt200xt atc c2, c3 10 pf chip capacitors atc100b100jt500xt atc c4, c11 2.2 f, 50 v chip capacitors c1825c225j5rac kemet c6, c16 0.1 uf 50v chip capacitors cdr33bx104akym kemet c7, c17 22k pf chip capacitors atc200b223kt50xt atc c8, c18 39k pf chip capacitors atc200b393kt50xt atc c9 22 f, 35 v tantalum capacitor t491x226k035at kemet c10 10 f, 35 v tantalum capacitor t491d106k035at kemet c13, c14 6.2 pf chip capacitors atc100b6r2bt500xt atc c19 470 f, 63 v electrolytic capacitor mcgpr63v477m13x26--rh multicomp c20 47 f, 50 v electrolytic capacitor 476kxm050m illinois cap l1 17.5 nh inductor b06t coilcraft l2, l4 82 nh inductors 1812sms--82nj coilcraft l3 5.0 nh inductor a02t coilcraft r1 120 ? , 1/4 w chip resistor crcw1206120rfkea vishay pcb pcb material 0.030? cuclad 250gx--0300--55--22, 0.030 , r =2.55 arlon
10 rf device data freescale semiconductor mrf6v2010nr1 mrf6v2010nbr1 figure 17. mrf6v2010nr1(nbr1) test circuit component layout ? 64 mhz 64 mhz cut out area rev. 1 c11 c10 c9 c8 c7 b1 l1 c1 l2 c5 c6 r1 c2 c3 c4 c18 c19 c20 b2 c21 l6 c16 c12 c13 l3 l4 c17 l5 c15 c14 table 9. mrf6v2010nr1(nbr1) test circuit c omponent designations and values ? 64 mhz part description part number manufacturer b1, b2 95 ?, 100 mhz long ferrite beads, surface mount 2743021447 fair--rite c1, c5, c15, c17 1000 pf chip capacitors atc100b102jt50xt atc c2 91 pf chip capacitor atc100b910jt500xt atc c3, c14 22 pf chip capacitors atc100b220jt500xt atc c4, c16 2.2 f, 50 v chip capacitors c1825c225j5rac kemet c6 220 nf, 50 v chip capacitor c1812c224j5rac kemet c7, c18 0.1 f, 50 v chip capacitors cdr33bx104akym kemet c8, c19 100k pf chip capacitors atc200b104kt50xt atc c9, c20 22k pf chip capacitors atc200b223kt50xt atc c10 22 f, 35 v tantalum capacitor t491x226k035at kemet c11 10 f, 35 v tantalum capacitor t491d106k035at kemet c12 68 pf chip capacitor atc100b680jt500xt atc c13 27 pf chip capacitor atc100b270jt500xt atc c21 330 f, 63 v electrolytic capacitor mcrh63v337m13x21--rh multicomp l1 17.5 nh inductor b06t coilcraft l2 43 nh inductor b10t coilcraft l3, l4, l5, l6 82 nh inductors 1812sms--82nj coilcraft r1 180 ? , 1/4 w chip resistor crcw1206180rfkea vishay pcb pcb material 0.030 cuclad 250gx--0300--55--22, 0.030 , r =2.55 arlon
mrf6v2010nr1 mrf6v2010nbr1 11 rf device data freescale semiconductor f = 450 mhz z source z o =50 ? f = 220 mhz z source f = 130 mhz z source f=64mhzz load f=64mhzz source f = 130 mhz z load f = 220 mhz z load f = 450 mhz z load v dd =50vdc,i dq =30ma,p out =10wcw f mhz z source ? z load ? 64 37.5 + j15.1 94.5 + j16.7 130 26.7 + j21.3 83.8 + j35.0 220 20.0 + j25.4 75.0 + j44.0 450 7.70 + j21.0 43.0 + j49.0 z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. figure 18. series equivalent source and load impedance z source z load input matching network device under test output matching network
12 rf device data freescale semiconductor mrf6v2010nr1 mrf6v2010nbr1 50 ohm typical characteristics table 10. common source s--parameters (v dd =50v,i dq =30ma,t a =25 c, 50 ohm system) f mhz s 11 s 21 s 12 s 22 |s 11 | ? |s 21 | ? |s 12 | ? |s 22 | ? 10 0.997 -- 5 . 0 11.520 175.6 0.000790 84.6 0.960 -- 0 . 8 20 0.994 -- 9 . 5 11.419 171.6 0.00157 84.3 0.962 -- 3 . 5 30 0.992 --14.5 11.356 167.9 0.00232 78.1 0.963 -- 5 . 5 40 0.987 --19.3 11.278 164.1 0.00307 74.6 0.964 -- 7 . 7 50 0.981 --24.0 11.187 160.1 0.00380 71.0 0.964 -- 9 . 9 60 0.974 --28.6 11.042 156.1 0.00449 67.4 0.963 --12.1 70 0.965 --33.0 10.848 152.1 0.00513 63.8 0.961 --14.2 80 0.955 --37.4 10.636 148.2 0.00574 60.4 0.958 --16.3 90 0.944 --41.6 10.405 144.5 0.00631 57.0 0.955 --18.4 100 0.933 --45.7 10.147 140.8 0.00683 53.8 0.951 --20.4 120 0.912 --53.3 9.603 134.2 0.00776 47.9 0.944 --24.2 140 0.892 --60.4 9.061 127.9 0.00851 42.4 0.936 --27.9 160 0.873 --66.7 8.516 122.2 0.00914 37.6 0.929 --31.3 180 0.856 --72.7 7.993 116.9 0.00967 32.9 0.923 --34.6 200 0.841 --78.1 7.497 112.1 0.0101 28.7 0.918 --37.9 220 0.828 --83.0 7.040 107.5 0.0104 24.9 0.914 --41.1 240 0.819 --87.5 6.612 103.3 0.0107 21.3 0.912 --44.2 260 0.810 --91.7 6.214 99.3 0.0109 18.0 0.909 --47.2 280 0.804 --95.5 5.845 95.7 0.0110 15.0 0.908 --50.2 300 0.799 --99.0 5.507 92.2 0.0112 11.9 0.907 --53.0 320 0.796 --102.2 5.192 88.8 0.0112 9.1 0.906 --55.9 340 0.794 --105.1 4.901 85.7 0.0113 6.5 0.906 --58.6 360 0.793 --107.8 4.630 82.8 0.0112 4.1 0.906 --61.4 380 0.793 --110.4 4.382 79.9 0.0112 2.0 0.906 --64.1 400 0.794 --112.7 4.152 77.2 0.0112 -- 0 . 3 0.906 --66.7 420 0.796 --114.9 3.937 74.6 0.0112 -- 2 . 5 0.907 --69.3 440 0.798 --116.9 3.733 72.2 0.0111 -- 4 . 4 0.907 --71.8 460 0.800 --118.8 3.547 69.8 0.0110 -- 6 . 5 0.908 --74.2 480 0.803 --120.5 3.372 67.6 0.0109 -- 8 . 5 0.908 --76.7 500 0.807 --122.2 3.213 65.4 0.0108 --10.0 0.909 --79.0 520 0.810 --123.8 3.061 63.3 0.0107 -- 1 1 . 9 0.910 --81.3 540 0.814 --125.4 2.919 61.2 0.0105 --13.5 0.911 --83.6 560 0.817 --126.8 2.784 59.3 0.0104 --14.9 0.912 --85.8 580 0.821 --128.1 2.661 57.5 0.0103 --16.6 0.914 --87.9 600 0.825 --129.3 2.545 55.7 0.0101 --18.1 0.915 --90.0 620 0.829 --130.5 2.436 53.9 0.00996 --19.6 0.917 --92.1 640 0.833 --131.6 2.334 52.2 0.00981 --21.0 0.918 --94.1 660 0.837 --132.7 2.237 50.5 0.00963 --22.4 0.920 --96.0 680 0.840 --133.8 2.144 48.9 0.00946 --23.7 0.921 --97.9 700 0.843 --134.8 2.058 47.3 0.00928 --25.0 0.923 --99.7 720 0.847 --135.8 1.977 45.8 0.00910 --26.1 0.924 --101.4 740 0.850 --136.8 1.900 44.4 0.00894 --27.3 0.926 --103.0 760 0.854 --137.8 1.828 43.0 0.00876 --28.6 0.928 --104.7 780 0.857 --138.7 1.760 41.6 0.00859 --29.7 0.930 --106.2 (continued)
mrf6v2010nr1 mrf6v2010nbr1 13 rf device data freescale semiconductor 50 ohm typical characteristics table 10. common source s--parameters (v dd =50v,i dq =30ma,t a =25 c, 50 ohm system) (continued) f mhz s 11 s 21 s 12 s 22 |s 11 | ? |s 21 | ? |s 12 | ? |s 22 | ? 800 0.858 --139.7 1.697 40.2 0.00839 --31.1 0.932 --107.6 820 0.861 --140.7 1.636 38.9 0.00818 --32.1 0.934 --109.0 840 0.864 --141.6 1.578 37.6 0.00798 --33.1 0.935 --110.4 860 0.867 --142.6 1.523 36.4 0.00781 --33.8 0.936 -- 1 1 1 . 7 880 0.870 --143.5 1.471 35.1 0.00763 --34.8 0.938 --112.9 900 0.873 --144.5 1.421 33.9 0.00745 --35.9 0.939 --114.1
14 rf device data freescale semiconductor mrf6v2010nr1 mrf6v2010nbr1 package dimensions
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16 rf device data freescale semiconductor mrf6v2010nr1 mrf6v2010nbr1
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18 rf device data freescale semiconductor mrf6v2010nr1 mrf6v2010nbr1
mrf6v2010nr1 mrf6v2010nbr1 19 rf device data freescale semiconductor
20 rf device data freescale semiconductor mrf6v2010nr1 mrf6v2010nbr1 product documentation and software refer to the following documents to aid your design process. application notes ? an1907: solder reflow attach method for high power rf devices in plastic packages ? an1955: thermal measurement methodology of rf power amplifiers ? an3263: bolt down mounting method for high power rf transistors and rfics in over--molded plastic packages engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices software ? electromigration mttf calculator ? rf high power model for software, do a part number search at http://www.freescale.c om, and select the ?part num ber? link. go to the software & tools tab on the part?s product summary page to download the respective tool. revision history the following table summarizes revisions to this document. revision date description 0 feb. 2007 ? initial release of data sheet 1 may 2007 ? corrected test circuit component part numbers in t able 6, component designations and values for c1, c8, c11, c18, c4, c13, c5, and c14, p. 3 ? corrected series impedance z source and z load values, fig. 13, series equivalent source and load impedance, p. 7 2 aug. 2007 ? replaced case outline 1265--08 with 1265--09, issue k, p. 1, 12--14. corrected cross hatch pattern in bottom view and changed its dimensions (d2 and e3 ) to minimum value on source contact (d2 changed from min--max .290--.320 to .290 min; e3 changed fr om min--max .150--.180 to .150 min). added jedec standard package number. ? replaced case outline 1337--03 with 1337--04, p. 1, 15--17. issue d: removed drain--id label from view y--y on sheet 2. renamed e2 to e3. added cross--hatch region dimensions d2 and e2. ? corrected test circuit component part number in tabl e 6, component designations and values for r1, p. 3 ? added figure 12, power gain and drain eff iciency versus cw output power, p. 6 ? corrected plot points to show 50 ohms in figure 14, series equivalent source and load impedance, p. 7 ? added figures 15--17, test circuit component lay out and tables 7--9, test circuit component designations and values to show 130, 450 and 64 mhz, respectively, p. 8--10 ? added figure 18, series equi valent source and load impedance to show 64, 130, 220 and 450 mhz plot points, p. 11 3 feb. 2008 ? added case operating temperature limit to th e maximum ratings table and set limit to 150 c, p. 1 ? corrected c iss test condition to indica te ac stimulus on the v gs connection versus the v ds connection, dynamic characteristics table, p. 2 ? replaced case outline 1337--04, issue d, with 1337--04, issue e, p. 15--17. corrected document number 98asa99191d on sheet 3. 4 mar. 2008 ? corrected z source (37.5 + j15.1) and z load (94.5 + j16.7) 64 mhz values and replotted both, p. 11 ? added s--parameter table, p. 12, 13 5 apr. 2010 ? operating junction temperature increased from 200 c to 225 c in maximum ratings table, related ?continuous use at maximum temperature will affect mttf? footnote added and changed 200 c to 225 c in capable plastic package bullet, p. 1 ? added electromigration mttf calculator and rf hi gh power model availability to product software, p. 20
mrf6v2010nr1 mrf6v2010nbr1 21 rf device data freescale semiconductor information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regar ding the suitab ility of its products for any particula r purpose, nor does freescale semiconductor assu me any liability ari sing out of the app lication or use of any product or circuit, and specifically discl aims any and all liability, including without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems int ended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subs idiaries, affiliate s, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale t and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2007--2008, 2010. all rights reserved. how to reach us: home page: www.freescale.com web support: http://www.freescale.com/support usa/europe or locations not listed: freescale semiconductor, inc. technical information center, el516 2100 east elliot road tempe, arizona 85284 1--800--521--6274 or +1--480--768--2130 www.freescale.com/support europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33169354848(french) www.freescale.com/support japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1--8--1, shimo--meguro, meguro--ku, tokyo 153--0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor china ltd. exchange building 23f no. 118 jianguo road chaoyang district beijing 100022 china +86 10 5879 8000 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center 1--800--441--2447 or +1--303--675--2140 fax: +1--303--675--2150 ldcforfreescalesemiconductor@hibbertgroup.com document number: mrf6v2010n rev. 5, 4/2010

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